Tang, B., Veluri, H., Li, Y., Yu, Z. G., Waqar, M., Leong, J. F., Sivan, M., Zamburg, E., Zhang, Y.-W., Wang, J., & Thean, A. V.-Y. (2022). Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing. Nature Communications, 13(1). https://doi.org/10.1038/s41467-022-30519-w
AbstractRealization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS2 memristor arrays are reported. The MoS2 memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS2 memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS2 layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.
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This research / project is supported by the National Research Foundation - Competitive Research Programme
Grant Reference no. : NRF-CRP24-2020-0002
This research / project is supported by the National Research Foundation - Returning Singapore Scientist Scheme
Grant Reference no. : NRF- RSS2015-003
This research / project is supported by the A*STAR - SERC Central Research Fund Award
Grant Reference no. : N.A
NUS Hybrid Integrated Flexible Electronic System and E6-Nanolab .