Homogeneous in-plane WSe2 P–N junctions for advanced optoelectronic devices

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Homogeneous in-plane WSe2 P–N junctions for advanced optoelectronic devices
Title:
Homogeneous in-plane WSe2 P–N junctions for advanced optoelectronic devices
Journal Title:
Nanoscale
Publication Date:
25 January 2023
Citation:
Yue, D., Ju, X., Hu, T., Rong, X., Liu, X., Liu, X., Ng, H. K., Chi, D., Wang, X., & Wu, J. (2023). Homogeneous in-plane WSe2 P–N junctions for advanced optoelectronic devices. Nanoscale, 15(10), 4940–4950. https://doi.org/10.1039/d2nr06263a
Abstract:
Through selective plasma doping, the in situ construction of homogeneous lateral WSe2 P–N junctions within a single WSe2 flake is achieved. Our device shows an external quantum efficiency of ∼228% and a high photoresponsivity of ∼7.1 × 104 mA W−1.
License type:
Attribution-NonCommercial 4.0 International (CC BY-NC 4.0)
Funding Info:
This research / project is supported by the National Research Foundation - Competitive Research Grant
Grant Reference no. : NRF-CRP24-2020-0002

This research / project is supported by the A*STAR - AME Young Individual Research Grants (YIRG)
Grant Reference no. : A2084c170

This research / project is supported by the A*STAR - SERC - Central Research Fund (CRF)
Grant Reference no. : N.A

This work was supported by the National Natural Science Foundation of China (Grant No.12104319), the Shenzhen Science and technology planning project (JSGG20201102152403008), the Double High-levels Plan (11400-2022-010201-02332) and the Science and Technology Project of Shenzhen City (JSGG20210802154213040).
Description:
ISSN:
2040-3372
2040-3364
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