Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures

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Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures
Title:
Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures
Journal Title:
ACS Nano
Publication Date:
06 April 2023
Citation:
Zhang, Y., Venkatakrishnarao, D., Bosman, M., Fu, W., Das, S., Bussolotti, F., Lee, R., Teo, S. L., Huang, D., Verzhbitskiy, I., Jiang, Z., Jiang, Z., Chai, J., Tong, S. W., Ooi, Z.-E., Wong, C. P. Y., Ang, Y. S., Goh, K. E. J., & Lau, C. S. (2023). Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures. ACS Nano, 17(8), 7929–7939. https://doi.org/10.1021/acsnano.3c02128
Abstract:
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOTs), excellent gate control, and low leakage currents. Here, large-area liquid-metal-printed ultrathin Ga2O3 dielectrics for 2D electronics and optoelectronics are reported. The atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing are directly visualized. Atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on a chemical-vapor-deposition-grown monolayer WS2 is demonstrated, achieving EOTs of ∼1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultrascaled low-power logic circuits. These results show that liquid-metal-printed oxides can bridge a crucial gap in dielectric integration of 2D materials for next-generation nanoelectronics.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the Agency for Science, Technology, and Research - MTC Young Individual Research Grants (YIRG)
Grant Reference no. : M21K3c0124

This research is supported by core funding from: ASTAR - Delta Q
Grant Reference no. : #21709

This research / project is supported by the National Research Foundation - Competitive Research Programme
Grant Reference no. : CRP21-2018-0001

This research / project is supported by the Agency for Science, Technology, and Research - AME Young Individual Research Grants (YIRG)
Grant Reference no. : A2084c0179

This research / project is supported by the Ministry of Education - Academic Research Fund Tier 2
Grant Reference no. : MOE-T2EP50221-0019

This research / project is supported by the Ministry of Education - AcRF Tier 1 startup Grant
Grant Reference no. : R-284-000- 179-133/A-0009238-01-00

This research / project is supported by the Agency for Science, Technology, and Research - Career Development Fund (CDF)
Grant Reference no. : C222812022

This research / project is supported by the Agency for Science, Technology, and Research - MTC Young Individual Research Grants (YIRG)
Grant Reference no. : M22K3c0105
Description:
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.3c02128
ISSN:
1936-086X
1936-0851
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