Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures

Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures

ACS Nano

10.1021/acsnano.3c02128

http://dx.doi.org/10.1021/acsnano.3c02128

Yiyu Zhang, Dasari Venkatakrishnarao, Michel Bosman, Wei Fu, Sarthak Das, Fabio Bussolotti, Rainer Lee, Siew Lang Teo, Ding Huang, Ivan Verzhbitskiy, Zhuojun Jiang, Zhuoling Jiang, Jianwei Chai, Shi Wun Tong, Zi-En Ooi, Calvin Pei Yu Wong, Yee Sin Ang, Kuan Eng Johnson Goh, Chit Siong Lau

General Materials Science, General Physics and Astronomy, General Engineering

06 April 2023

Zhang, Y., Venkatakrishnarao, D., Bosman, M., Fu, W., Das, S., Bussolotti, F., Lee, R., Teo, S. L., Huang, D., Verzhbitskiy, I., Jiang, Z., Jiang, Z., Chai, J., Tong, S. W., Ooi, Z.-E., Wong, C. P. Y., Ang, Y. S., Goh, K. E. J., & Lau, C. S. (2023). Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures. ACS Nano, 17(8), 7929–7939. https://doi.org/10.1021/acsnano.3c02128

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOTs), excellent gate control, and low leakage currents. Here, large-area liquid-metal-printed ultrathin Ga2O3 dielectrics for 2D electronics and optoelectronics are reported. The atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing are directly visualized. Atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on a chemical-vapor-deposition-grown monolayer WS2 is demonstrated, achieving EOTs of ∼1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultrascaled low-power logic circuits. These results show that liquid-metal-printed oxides can bridge a crucial gap in dielectric integration of 2D materials for next-generation nanoelectronics.

Publisher Copyright

This research / project is supported by the Agency for Science, Technology, and Research - MTC Young Individual Research Grants (YIRG)
Grant Reference no. : M21K3c0124

This research is supported by core funding from: ASTAR - Delta Q
Grant Reference no. : #21709

This research / project is supported by the National Research Foundation - Competitive Research Programme
Grant Reference no. : CRP21-2018-0001

This research / project is supported by the Agency for Science, Technology, and Research - AME Young Individual Research Grants (YIRG)
Grant Reference no. : A2084c0179

This research / project is supported by the Ministry of Education - Academic Research Fund Tier 2
Grant Reference no. : MOE-T2EP50221-0019

This research / project is supported by the Ministry of Education - AcRF Tier 1 startup Grant
Grant Reference no. : R-284-000- 179-133/A-0009238-01-00

This research / project is supported by the Agency for Science, Technology, and Research - Career Development Fund (CDF)
Grant Reference no. : C222812022

This research / project is supported by the Agency for Science, Technology, and Research - MTC Young Individual Research Grants (YIRG)
Grant Reference no. : M22K3c0105

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.3c02128

https://oar.a-star.edu.sg/communities-collections/articles/19018

1936-086X
1936-0851

Institute of Materials Research and Engineering