Hsiao, H.-Y., Ho, D. S. W., Chong, S. C., Chai, T. C., Schutzberger, D., Oz, Y., & Amrani, G. (2021). Through Mold Via Development Using Laser Drilling Process for 3D Fan-out Wafer Level Package. 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc53413.2021.9663959
Abstract:
Microsecond UV laser drilling technology was used to form through mold vias (TMVs) with different aspect ratios, which can be applied to 3D Fan-Out Wafer Level Packaging (FOWLP). A test vehicle was designed to test the electrical continuity of through mold vias with different aspect ratios. The test vehicles consisted of a thick Cu pads electroplated on a substrate, mold compound was molded over the Cu pads and UV laser was used to form the blind vias. A thick Cu metallization was formed over the laser drilled blind vias to complete a daisy chain test structure. Trepanning method was used to created concentric laser paths, along with different Top-hat beams sizes to produce TMVs of different aspect ratios. Electrical continuity test, cross sectional and X-ray were used to verify the TMV daisy chains. The electrical test, cross sectional and X-rays shows good continuity in the TMVs structure.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - IPP-IAF - Fan-Out Wafer-Level-Packaging (FO-WLP) Development Line
Grant Reference no. : 1528100051