Cu CMP Dishing in High Density Cu Pad for Fine Pitch Wafer-to-Wafer (W2W) Hybrid Bonding

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Cu CMP Dishing in High Density Cu Pad for Fine Pitch Wafer-to-Wafer (W2W) Hybrid Bonding
Title:
Cu CMP Dishing in High Density Cu Pad for Fine Pitch Wafer-to-Wafer (W2W) Hybrid Bonding
Journal Title:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC)
Keywords:
Publication Date:
05 January 2022
Citation:
Ji, H., & Chui, K.-J. (2021). Cu CMP Dishing in High Density Cu Pad for Fine Pitch Wafer-to-Wafer (W2W) Hybrid Bonding. 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc53413.2021.9663921
Abstract:
Wafer-to-wafer (W2W) hybrid bonding is a key process technology in advance heterogeneous integration. Electrical connections between top surface metal lines of different wafers (e.g. memory, logic) can be made by means of wafer-to-wafer stacking to enable reduced latency and data-bandwidth between different wafers.Successful implementation of this key process technology requires good bonding interfaces with controlled surface roughness and precise control of dishing/protrusion on both the dielectric and Cu pad surfaces.This paper characterizes the chemical mechanical planarization (CMP) process on hybrid bonding Cu surfaces for different Cu pad designs. It provides the guidelines in design of Cu pad/spacing, line/spacing pattern to achieve desired bonding surfaces after CMP polishing. This simplifies the layout design and reduces the process tuning cost.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Programmatic
Grant Reference no. : A1892b0026
Description:
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISBN:
978-1-6654-1619-1
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