Improving carrier mobility in two-dimensional semiconductors with rippled materials

Improving carrier mobility in two-dimensional semiconductors with rippled materials

Nature Electronics

10.1038/s41928-022-00777-z

http://dx.doi.org/10.1038/s41928-022-00777-z

Hong Kuan Ng, Du Xiang, Ady Suwardi, Guangwei Hu, Ke Yang, Yunshan Zhao, Tao Liu, Zhonghan Cao, Huajun Liu, Shisheng Li, Jing Cao, Qiang Zhu, Zhaogang Dong, Chee Kiang Ivan Tan, DongZhi Chi, Cheng-Wei Qiu, Kedar Hippalgaonkar, Goki Eda, Ming Yang, Jing Wu

Electrical and Electronic Engineering, Instrumentation, Electronic, Optical and Magnetic Materials

09 June 2022

Ng, H. K., Xiang, D., Suwardi, A., Hu, G., Yang, K., Zhao, Y., Liu, T., Cao, Z., Liu, H., Li, S., Cao, J., Zhu, Q., Dong, Z., Tan, C. K. I., Chi, D., Qiu, C.-W., Hippalgaonkar, K., Eda, G., Yang, M., & Wu, J. (2022). Improving carrier mobility in two-dimensional semiconductors with rippled materials. Nature Electronics, 5(8), 489–496. https://doi.org/10.1038/s41928-022-00777-z

Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–phonon scattering in 2D materials and thus improve the charge carrier mobility. We introduce lattice distortions into 2D molybdenum disulfide (MoS2) using bulged substrates, which create ripples in the 2D material leading to a change in the dielectric constant and a suppressed phonon scattering. A two orders of magnitude enhancement in room-temperature mobility is observed in rippled MoS2, reaching ∼900 cm2 V−1 s−1, which exceeds the predicted phonon-limited mobility of flat MoS2 of 200–410 cm2 V−1 s−1. We show that our approach can be used to create high-performance room-temperature field-effect transistors and thermoelectric devices.

Publisher Copyright

This research / project is supported by the A*STAR - SERC Central Research Fund
Grant Reference no. : CRF KIMR211001kSERCRF

This research / project is supported by the A*STAR - Advanced Manufacturing and Engineering Young Individual Research Grant
Grant Reference no. : A2084c170

This research / project is supported by the A*STAR - AME Programmatic Fund
Grant Reference no. : A1898b0043

This research / project is supported by the National Research Foundation - Competitive Research Programs
Grant Reference no. : NRFCRP24-2020-0002

Funding support (project IDs 1-BE47, ZE0C, ZE2F and ZE2X) from The Hong Kong Polytechnic University. National Natural Science Foundation (NSF) of China (grant no. 62104041) and Shanghai Sailing Program (grant no. 21YF1402600). NSF of Shanghai (grant no. 22ZR1405700).

This version of the article has been accepted for publication, after peer review and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1038/s41928-022-00777-z

https://oar.a-star.edu.sg/communities-collections/articles/18666

2520-1131

Institute of Materials Research and Engineering