Liu, T., Xiang, D., Ng, H. K., Han, Z., Hippalgaonkar, K., Suwardi, A., Martin, J., Garaj, S., & Wu, J. (2022). Modulation of Spin Dynamics in 2D Transition‐Metal Dichalcogenide via Strain‐Driven Symmetry Breaking. Advanced Science, 9(20), 2200816. Portico. https://doi.org/10.1002/advs.202200816
Transition metal dichalcogenides (TMDs) possess intrinsic spin–orbit interaction (SOI) with high potential to be exploited for various quantum phenomena. SOI allows the manipulation of spin degree of freedom by controlling the carrier's orbital motion via mechanical strain. Here, strain modulated spin dynamics in bilayer MoS2 field-effect transistors (FETs) fabricated on crested substrates are demonstrated. Weak antilocalization (WAL) is observed at moderate carrier concentrations, indicating additional spin relaxation path caused by strain fields arising from substrate crests. The spin lifetime is found to be inversely proportional to the momentum relaxation time, which follows the Dyakonov–Perel spin relaxation mechanism. Moreover, the spin–orbit splitting is obtained as 37.5 ± 1.4 meV, an order of magnitude larger than the theoretical prediction for monolayer MoS2, suggesting the strain enhanced spin-lattice coupling. The work demonstrates strain engineering as a promising approach to manipulate spin degree of freedom toward new functional quantum devices.
Attribution 4.0 International (CC BY 4.0)
This research / project is supported by the Agency for Science, Technology and Research - Advanced Manufacturing and Engineering Young Individual Research Grant
Grant Reference no. : A2084c170
This research / project is supported by the National Research Foundation - Competitive Research Program
Grant Reference no. : NRF-CRP13-2014-03
1) Natural Science Foundation of Shanghai (Grant No.22ZR1405700
2)National Natural Science Founda-tion (NSF) of China (Grant No. 62104041)
3) Shanghai Sailing Program(Grant No. 21YF1402600).