Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

Page view(s)
17
Checked on May 23, 2024
Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films
Title:
Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films
Journal Title:
Scientific Reports
Publication Date:
21 October 2020
Citation:
Recatala-Gomez, J., Kumar, P., Suwardi, A., Abutaha, A., Nandhakumar, I., & Hippalgaonkar, K. (2020). Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films. Scientific Reports, 10(1). http://dx.doi.org/10.1038/s41598-020-74887-z
Abstract:
The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.
License type:
Attribution 4.0 International (CC BY 4.0)
Funding Info:
This research / project is supported by the Agency for Science, Technology and Research - AME Programmatic Fund
Grant Reference no. : A1898b0043

A*STAR Graduate Academy (A*GA) - ARAP Scholarship
Description:
ISSN:
2045-2322
Files uploaded:

File Size Format Action
s41598-020-74887-z.pdf 2.07 MB PDF Open