Realization of High Aspect Ratio Through Mold Interconnect (TMI) using Vertical Wire

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Realization of High Aspect Ratio Through Mold Interconnect (TMI) using Vertical Wire
Title:
Realization of High Aspect Ratio Through Mold Interconnect (TMI) using Vertical Wire
Journal Title:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC)
Keywords:
Publication Date:
05 January 2022
Citation:
Wai, L. C., Wee, D. H. S., & Choong, C. S. (2021). Realization of High Aspect Ratio Through Mold Interconnect (TMI) using Vertical Wire. 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc53413.2021.9663883
Abstract:
A wire bonding method with free end vertical wire is implemented. Through this method, it required a unique capillary with high-definition design, to achieve the high aspect ratio vertical interconnect requirement. These vertical wire act as through mold interconnect (TMI) for fan-out packaging. This paper showed that with the unique vertical wire profile, capillary design, as well as optimized parameters, the high aspect ratio of ∼18 through mold interconnect was achieved at 200μm bonded ball pitch with 2.0mil wire.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - IAF - Fan-out Wafer Level Packaging Development Line
Grant Reference no. : 1528100051
Description:
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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