Realization of High Aspect Ratio Through Mold Interconnect (TMI) using Vertical Wire

Realization of High Aspect Ratio Through Mold Interconnect (TMI) using Vertical Wire

2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC)

10.1109/EPTC53413.2021.9663883

http://dx.doi.org/10.1109/eptc53413.2021.9663883

Leong Ching Wai, David Ho Soon Wee, Chong Ser Choong

05 January 2022

Wai, L. C., Wee, D. H. S., & Choong, C. S. (2021). Realization of High Aspect Ratio Through Mold Interconnect (TMI) using Vertical Wire. 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc53413.2021.9663883

A wire bonding method with free end vertical wire is implemented. Through this method, it required a unique capillary with high-definition design, to achieve the high aspect ratio vertical interconnect requirement. These vertical wire act as through mold interconnect (TMI) for fan-out packaging. This paper showed that with the unique vertical wire profile, capillary design, as well as optimized parameters, the high aspect ratio of ∼18 through mold interconnect was achieved at 200μm bonded ball pitch with 2.0mil wire.

Publisher Copyright

This research / project is supported by the A*STAR - IAF - Fan-out Wafer Level Packaging Development Line
Grant Reference no. : 1528100051

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https://oar.a-star.edu.sg/communities-collections/articles/18476

Institute of Microelectronics