Lee, C. L. A., Zhang, X., & Chen, H. (2021). Nonlinear Thermal Stress/Strain Analyses of Through SiC Via. 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc53413.2021.9663892
Abstract:
This paper presents the stress and strain analysis of silicon carbide (SiC) interposer as an alternative to the commonly used silicon interposer or through silicon via (TSV) to utilize the greater thermal conductivity of SiC over Si. The radial stresses and axial strains at the interface during temperature loading are examined as an indication to delamination and cracking failures, due to the difference in coefficient of thermal expansion (CTE) of the copper via, dielectric layer and the Si/SiC. Finite element analysis is performed to investigate the effect of via diameter, via ratio (height/diameter), copper pad, and partial-filled via on the stresses and strains. The Si and SiC interposer impact on the solder joint reliability of SAC solders subjected to thermal cycling is also determined by monitoring the creep strain energy density per cycle (ΔW) of the solders. It is surmised from the simulation results that (1) via diameter 10μm and below is recommended for low radial stress and axial strain in fully Cu-filled SiC interposer and (2) replacing Si with SiC in interposer results in 39% increase in the maximum ΔW in SAC solders.
License type:
Publisher Copyright
Funding Info:
This research is supported by core funding from: Institute of Microelectronics
Grant Reference no. : N.A.