Ng, D. K. T., Zhang, T., Siow, L.-Y., Xu, L., Ho, C.-P., Cai, H., Lee, L. Y. T., Zhang, Q., & Singh, N. (2021). Improved Specific Detectivity to 107 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride. 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS). https://doi.org/10.1109/mems51782.2021.9375145
CMOS-MEMS pyroelectric detectors based on 12%-doped ScAlN are fabricated using 8-inch MEMS wafer technology and characterized. The ScAlN pyroelectric material is deposited at a low temperature of ~200 o C. The results show D* as high as 4.3 x 10 7 (cm√Hz)/W and NEP as low as 1.26 x 10 -9 W/√Hz. This is the first demonstration of a functional CMOS-MEMS pyroelectric detector using ScAlN as the pyroelectric sensing material. Compared to AlN that usually presents D* in the range of 10 5 -10 6 , Sc-doped AlN brings on the promise of better performing CMOS-MEMS pyroelectric detectors that could be miniaturized, integrated with CMOS circuits and provide wider applications.
This research / project is supported by the A*STAR - IAF-PP - Integrated Photonics Based Gas Sensors
Grant Reference no. : A1789a0024