Piezoelectric over Silicon-on-Nothing (pSON) process

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Piezoelectric over Silicon-on-Nothing (pSON) process
Title:
Piezoelectric over Silicon-on-Nothing (pSON) process
Journal Title:
2021 IEEE International Ultrasonics Symposium (IUS)
Keywords:
Publication Date:
12 November 2021
Citation:
Sharma, J., Goh, D. J., Merugu, S., Koh, Y., Ghosh, S., Khairy, M. H., & Ng, E. J. (2021). Piezoelectric over Silicon-on-Nothing (pSON) process. 2021 IEEE International Ultrasonics Symposium (IUS). https://doi.org/10.1109/ius52206.2021.9593772
Abstract:
This paper presents a novel fabrication process for piezoelectric micro-electromechanical systems (MEMS) using a membrane over a sealed cavity formed first in bulk silicon using silicon migration. A thin-film piezoelectric layer is then added on the membrane, conferring the structure with an electromechanical transduction mechanism. Suspended MEMS devices on tethers can be defined by etching the silicon membrane to release the structure. A 40 MHz piezoelectric resonator has been demonstrated in this process, but the same process flow can also be applicable to many other piezoelectric MEMS devices. Excellent control over the cavity and membrane dimensions as well as layer alignment is achievable in this process.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Programmatic - Nanosystems at the Edge
Grant Reference no. : A18A4b0055
Description:
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISBN:
978-1-6654-0355-9
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