Ghosh, S., Sharma, J., Ng, E. J., Goh, D. J., Merugu, S., Koh, Y., & Lal, A. (2021). Reduced TCF, High Frequency, Piezoelectric Contour-Mode Resonators with Silicon-on-Nothing. 2021 IEEE International Ultrasonics Symposium (IUS). https://doi.org/10.1109/ius52206.2021.9593752
This paper describes microelectromechanical systems (MEMS) contour mode resonators (CMRs) with 900MHz resonant frequencies suitable for radio frequency (RF) applications, using a ~2µm thick degenerately doped n-type silicon (Si) layer. The Silicon-on-Nothing (SON) process has been used to fabricate monocrystalline thin pre-released Si membranes over cavities with well-controlled thickness across the wafer. A thin layer of 15% scandium (Sc)-doped aluminum nitride (AIN) has been incorporated in the vertical stack of the CMRs for piezoelectric transduction. The CMRs were aligned to the <100> crystal orientation of a (100) Si substrate to obtain a reduced temperature coefficient of frequency (TCF) of - 7.4ppm/°C.
This research / project is supported by the A*STAR - Programmatic - Nanosystems at the Edge
Grant Reference no. : A18A4b0055