11× temporal compression in an ultra-silicon-rich nitride chip

Page view(s)
74
Checked on Jan 28, 2025
11× temporal compression in an ultra-silicon-rich nitride chip
Title:
11× temporal compression in an ultra-silicon-rich nitride chip
Journal Title:
2021 Conference on Lasers and Electro-Optics (CLEO)
DOI:
Publication Date:
29 October 2021
Citation:
J. W. Choi et al., "11× temporal compression in an ultra-silicon-rich nitride chip,& 2021 Conference on Lasers and Electro-Optics (CLEO), 2021
Abstract:
Strong temporal compression in an integrated ultra-silicon-rich nitride temporal compressor consisting of separate nonlinear and anomalously dispersive stages is demonstrated. 11× compression of 5.8ps pulses at a low input peak power of 13.3W and 9.4× increase in the pulse peak power is achieved.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the National Research Foundation (NRF) - Competitive Research Programme
Grant Reference no. : NRF-CRP18-2017-03

This research / project is supported by the Ministry of Education - ACRF Tier 2
Grant Reference no. : NA
Description:
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISBN:
978-1-943580-91-0
Files uploaded: