Probing the Ionic and Electrochemical Phenomena during Resistive Switching of NiO Thin Films

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Probing the Ionic and Electrochemical Phenomena during Resistive Switching of NiO Thin Films
Title:
Probing the Ionic and Electrochemical Phenomena during Resistive Switching of NiO Thin Films
Other Titles:
ACS Applied Materials & Interfaces
Publication Date:
09 February 2018
Citation:
Lu, W., Xiao, J., Wong, L.-M., Wang, S., & Zeng, K. (2018). Probing the Ionic and Electrochemical Phenomena during Resistive Switching of NiO Thin Films. ACS Applied Materials & Interfaces, 10(9), 8092–8101. https://doi.org/10.1021/acsami.7b16188
Abstract:
Ionic transport and electrochemical reactions underpin the functionality of the memory devices. NiO, as a promising transition metal oxide for developing resistive switching random access memory, has been extensively explored in the terms of the resistive switching. However, there is limited experimental evidence to visualize the ionic processes of the NiO under the external electrical field. In addition, the correlation between the ionic processes and the resistive switching has not been established. To close this gap and also to determine the role of the ionic processes in resistive switching of the NiO, in this study, a series of scanning probe microscopy techniques, including electrochemical strain microscopy (ESM), conductive atomic force microscopy, Kelvin probe force microscopy, and a newly developed first-order reversal curve-IV, are employed to measure the ESM response, the resistive switching performance, the work function, and the ionic dynamics of NiO, respectively. The results in this work have clearly visualized the ionic transport and electrochemical reactions of NiO when subjected to the electrical field. It has been found that the ionic processes and the resistive switching accompanied each other. Furthermore, it is found that the electrochemical reactions play a determinative role in the resistive switching of the NiO, and this electrochemically induced resistive switching performance can be explained by an integrated mechanism that has combined the filamentary and the interfacial effects underlying resistive switching. In addition to providing a better understanding of the resistive switching of NiO, this work also provides effective methods to probe the ionic processes and to correlate these ionic processes to the performance of functional materials.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the Ministry of Education - Academic Research Funding (AcRF)
Grant Reference no. : R-265-000-495-112

This is supported by postgraduate scholarship provided by National University of Singapore.
Description:
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.7b16188
ISSN:
1944-8252
1944-8244
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