Area Efficient High Through-put Dual Heavy Metal Multi-Level Cell SOT-MRAM

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Area Efficient High Through-put Dual Heavy Metal Multi-Level Cell SOT-MRAM
Title:
Area Efficient High Through-put Dual Heavy Metal Multi-Level Cell SOT-MRAM
Other Titles:
IEEE Transactions on Nanotechnology
Publication Date:
29 July 2020
Citation:
Ali, K., Li, F., Lua, S. Y. H., & Heng, C.-H. (2020). Area Efficient High Through-put Dual Heavy Metal Multi-Level Cell SOT-MRAM. IEEE Transactions on Nanotechnology, 19, 613–619. doi:10.1109/tnano.2020.3012669
Abstract:
This paper proposes a novel multi-level cell spin-orbit torque magnetic random-access memory (MLC SOT-MRAM) cell structure and validates its functionality and performance through simulation. The proposedmemory cell comprises two uniformmagnetic tunnel junctions (MTJs) that can be programmed separately by the energy efficient SOT technology through two different heavy metal electrodes. This permit employing both single and dual port architectures. The uniform cross-sectional area of the in-series MTJs stack simplifies the fabrication process. In addition, the cell structure requires only four terminals to successfully read and write the two bits. This allows accessing the two bits with only three access transistors, which achieves 25% smaller 1-bit effective area compared to the conventional single level cell (SLC) SOT-MRAM that requires four transistors. Simulation results based on an approximated dynamic model shows it offers nearly similar write energy consumption compared to the conventional SOT-MRAM.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - SpOT-LITE program
Grant Reference no. : Grant No. A18A6b0057
Description:
© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
1536-125X
1941-0085
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