Volatile Ultrafast Switching at Multilevel Nonvolatile States of Phase Change Material for Active Flexible Terahertz Metadevices

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Volatile Ultrafast Switching at Multilevel Nonvolatile States of Phase Change Material for Active Flexible Terahertz Metadevices
Title:
Volatile Ultrafast Switching at Multilevel Nonvolatile States of Phase Change Material for Active Flexible Terahertz Metadevices
Journal Title:
Advanced Functional Materials
Publication Date:
22 February 2021
Citation:
Pitchappa, P., Kumar, A., Prakash, S., Jani, H., Medwal, R., Mishra, M., Rawat, R. S., Venkatesan, T., Wang, N., & Singh, R. (2021). Volatile Ultrafast Switching at Multilevel Nonvolatile States of Phase Change Material for Active Flexible Terahertz Metadevices. Advanced Functional Materials, 31(17), 2100200. Portico. https://doi.org/10.1002/adfm.202100200
Abstract:
Phase change materials provide unique reconfigurable properties for photonic applications that mainly arises from its exotic characteristic to reversibly switch between the amorphous and crystalline non-volatile phases. Optical pulse based reversible switching of non-volatile phases are exploited in various nanophotonic devices. However, larger area reversible switching is extremely challenging, and has hindered its translation into technologically significant terahertz spectral domain. Here, we circumvent this limitation by exploiting the semiconducting nature of germanium antimony telluride (GST) to achieve dynamic terahertz control at picosecond timescales. We also show that the ultrafast response can be actively altered by changing the crystallographic phase of GST. The ease of fabrication of phase change materials allowed for the realization of variable ultrafast terahertz modulator on a flexible platform. The rich properties of phase change materials combined with the diverse functionality of metamaterial and all-optical ultrafast control, enables an ideal platform for the realization of efficient terahertz communication devices, terahertz neuromorphic photonics and smart sensor systems.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the Agency for Science, Technology and Research (A*STAR) - Advanced Manufacturing and Engineering (AME) Programmatic grant
Grant Reference no. : A18A5b0056

This research / project is supported by the Ministry of Education - Academic Research Fund (AcRF) Tier 1
Grant Reference no. : RG191/17

This research / project is supported by the Ministry of Education - Academic Research Fund (AcRF) Tier 2
Grant Reference no. : MOE2017-T2-1-110

This research / project is supported by the Ministry of Education - Academic Research Fund (AcRF) Tier 3
Grant Reference no. : MOE2016-T3-1-006(S)

This research / project is supported by the National Research Foundation - Competitive Research Programme - Oxide Electronics on silicon Beyond Moore
Grant Reference no. : NRF-CRP15-2015-01
Description:
This is the peer reviewed version of the following article: Pitchappa, P., Kumar, A., Prakash, S., Jani, H., Medwal, R., Mishra, M., Rawat, R. S., Venkatesan, T., Wang, N., & Singh, R. (2021). Volatile Ultrafast Switching at Multilevel Nonvolatile States of Phase Change Material for Active Flexible Terahertz Metadevices. Advanced Functional Materials, 31(17), 2100200. Portico. https://doi.org/10.1002/adfm.202100200, which has been published in final form at https://doi.org/10.1002/adfm.202100200. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.
ISSN:
1616-301X
1616-3028
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