Chapter 7: STM/STS and ARPES Characterisation – Structure and Electronic Properties

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Chapter 7: STM/STS and ARPES Characterisation – Structure and Electronic Properties
Title:
Chapter 7: STM/STS and ARPES Characterisation – Structure and Electronic Properties
Journal Title:
2D Semiconductor Materials and Devices
Publication Date:
22 November 2019
Citation:
Fabio Bussolotti, Dongzhi Chi, K.E. Johnson Goh, Yu Li Huang, Andrew T.S. Wee, Chapter 7 - STM/STS and ARPES characterization—structure and electronic properties, Editor(s): Dongzhi Chi, K.E. Johnson Goh, Andrew T.S. Wee, In Materials Today, 2D Semiconductor Materials and Devices, Elsevier, 2020, Pages 199-220, ISBN 9780128161876, https://doi.org/10.1016/B978-0-12-816187-6.00007-8.
Abstract:
In this chapter, we review the recent literature on scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) and angle-resolved photoemission spectroscopy (ARPES) characterization of 2D semiconductor materials, focusing on 2D transition metal dichalcogenides (TMDCs) and mono-elemental 2D materials. After the introduction, we provide a brief description of the working principles of the STM and ARPES techniques, highlighting some of their advantages and limitations. We next discuss the fundamental atomic and electronic properties of 2D TMDCs (e.g., MoS2, MoSe2, and WSe2) characterized by STM/STS and ARPES/spin-resolved ARPES, to elucidate their exotic layer-dependent properties. In addition, we highlight some recent progress achieved on 2D mono-elemental materials, including silicene, black phosphorus, antimonene. We conclude this chapter with a forward-looking perspective on the future scientific challenges and developments in this field.
License type:
http://creativecommons.org/licenses/by-nc-nd/4.0/
Funding Info:
Valleytronics Projects (IMRE/15-2R0706), Singapore A*STAR 2D PHAROS project: 2D devices & materials for ubiquitous electronic, sensor and optoelectronic applications (Project No: SERC 152-70-00012)
Description:
ISBN:
978-0-12-816187-6
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