Dielectric nanocomposite of diphenylethylenediamine and P-type multi-walled carbon nanotube for capacitive carbon dioxide sensors

Dielectric nanocomposite of diphenylethylenediamine and P-type multi-walled carbon nanotube for capacitive carbon dioxide sensors
Title:
Dielectric nanocomposite of diphenylethylenediamine and P-type multi-walled carbon nanotube for capacitive carbon dioxide sensors
Other Titles:
Sensors & Actuators B: Chemical
Publication Date:
08 December 2016
Citation:
Mojtaba Rahimabady, Chin Yaw Tan, Sze Yu Tan, Shuting Chen, Lei Zhang, Yi Fan Chen, Kui Yao, Keyan Zang, Aurélie Humbert, Dimitri Soccol, Michael Bolt, “Dielectric nanocomposite of diphenylethylenediamine and P-type multi-walled carbon nanotube for capacitive carbon dioxide sensors,” Sensors & Actuators: B. Chemical, Vol. B 243, pp. 596–601, 2017. (http://dx.doi.org/10.1016/j.snb.2016.12.023)
Abstract:
Dielectric nanocomposite comprising P-type multi-walled carbon nanotube and low molecular weight organic (1R,2R)-(+)-1,2-diphenylethylenediamine, which is stabilised with an acrylate resin, is prepared and used as a sensing layer for capacitive carbon dioxide sensor operated at room temperature. It is found that adding a small amount (0.5 wt%) of P-type multi-walled carbon nanotube in diphenylethylenediamine can dramatically improve the CO2 sensitivity by ~100 times. The P-type multi-walled carbon nanotube significantly increases the transformation rate of amine to carbamate in CO2 atmosphere as a catalyst for the chemical interactive sensing mechanism. In addition, P-type multi-walled carbon nanotube substantially improves temperature and humidity cross-sensitivities. The results show that the dielectric nanocomposite of diphenylethylenediamine and P-type multi-walled carbon nanotube is promising for capacitive carbon dioxide sensing application with ppm sensitivity at room temperature.
License type:
PublisherCopyrights
Funding Info:
The authors would like to acknowledge the research grant support from Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, and NXP Semiconductors, through project IMRE/13-3P1103, and facility support from SNFC from IMRE, A*STAR.
Description:
ISSN:
0925-4005
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