Yumei Wang, Kui Yao, Xian Qin, Meysam Sharifzadeh Mirshekarloo, Xiaogang Liu, and Francis Eng Hock Tay, “High Piezoelectric Performance and Phase Transition in Stressed Lead-free (1-x)(K, Na)(Sb, Nb)O3-x(Bi, Na, K)ZrO3 Thin Films,” Advanced Electronic Materials, 1700033 (1 of 6), May 2017. (DOI: 10.1002/aelm.201700033); cover page, Vol. 3, No. 7, 2017
Although high performance piezoelectric properties have been reported in (K, Na)NbO3 (KNN)-based bulk ceramics by constructing morphotropic phase boundary (MPB) with complex compositions, it is still challenging to achieve excellent piezoelectric properties in thin films with the same MPB compositions due to the serious volatile loss of the alkali constituents. Moreover, the stress due to substrate constraint also changes the film’s crystal structure and shifts the film’s MPB. Here we demonstrate the highest ever reported effective piezoelectric strain coefficient d33 of 184.0 pm V-1 and voltage coefficient g33 of 39.4 mm V N-1 from macro scale characterization in a solution-derived lead-free piezoelectric thin film with a composition of (1-x)(K, Na)(Sb, Nb)O3-x(Bi, Na, K)ZrO3 (KNSN-BNKZx, 0.01≤ x ≤0.07). With the effective suppression of volatile compositional loss by selecting appropriate combinational chemical agents in the precursor solution, phase transitions from orthorhombic, rhombohedral to tetragonal are observed experimentally and further analyzed theoretically with first principle simulation of the KNSN-BNKZx films, and the obtained coexistence of rhombohedral-tetragonal phase at x=0.05 contributes to the outstanding piezoelectric performance in the tensile stressed films. Our results demonstrate a valuable strategy for realizing high-performance piezoelectric properties in thin films with volatile and complex MPB compositions under stress condition.
The authors acknowledge the research grant support in part by the Singapore Ministry of National Development and National Research Foundation under L2NIC Award No. L2NICCFP1-2013-9, with project code of IMRE/14-9P1112 and facility support at IMRE and Department of Materials Science & Engineering, National University of Singapore.
This is the peer reviewed version of the following article: Wang, Y., Yao, K., Qin, X., Mirshekarloo, M. S., Liu, X., Tay, F. E. H., Adv. Electron. Mater. 2017, 3, 1700033. https://doi.org/10.1002/aelm.201700033
, which has been published in final form at https://doi.org/10.1002/aelm.201700033. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.