Toward Valley‐Coupled Spin Qubits

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Toward Valley‐Coupled Spin Qubits
Title:
Toward Valley‐Coupled Spin Qubits
Journal Title:
Advanced Quantum Technologies
Publication Date:
13 May 2020
Citation:
Goh, K.E.J., Bussolotti, F., Lau, C.S., Kotekar‐Patil, D., Ooi, Z.E. and Chee, J.Y. (2020), Toward Valley‐Coupled Spin Qubits. Adv. Quantum Technol.. doi:10.1002/qute.201900123
Abstract:
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin‐based qubits in solid‐state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid‐state spin qubits as residual spins from substrate, dielectric, electrodes, or contaminants from processing contribute to spin decoherence. In the recent decade, valleytronics has seen a revival due to the discovery of valley‐coupled spins in monolayer transition metal dichalcogenides. Such valley‐coupled spins are protected by inversion asymmetry and time reversal symmetry and are promising candidates for robust qubits. In this report, the progress toward building such qubits is presented. Following an introduction to the key attractions in fabricating such qubits, an up‐to‐date brief is provided for the status of each key step, highlighting advancements made and/or outstanding work to be done. This report concludes with a perspective on future development highlighting major remaining milestones toward scalable spin‐valley qubits.
License type:
PublisherCopyrights
Funding Info:
Agency for Science Technology and Research. Grant Numbers: 1527000016, A1685b0005
Description:
Building a new type of qubit based on valley-coupled spins: This report provides an update to the progress of the field, framed in the context of translating the promising science of valley-protected spins into actual building blocks of a quantum computer.
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