Multiscale Models for Electroplating of Through Silicon Vias

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Multiscale Models for Electroplating of Through Silicon Vias
Title:
Multiscale Models for Electroplating of Through Silicon Vias
Journal Title:
2018 International Wafer Level Packaging Conference (IWLPC)
Publication Date:
13 December 2018
Citation:
K. H. Khoo et al., "Multiscale Models for Electroplating of Through Silicon Vias," 2018 International Wafer Level Packaging Conference (IWLPC), San Jose, CA, 2018, pp. 1-9
Abstract:
We present multi-scale models providing guidelines for defect free growth of filling of through silicon vias (TSV) by electroplating. Using first-principles calculations, we understand the chemistry of the electroplating process. We use density functional theory calculations to identify the reaction mechanisms and calculate the reaction energies of the different additives i.e., chloride ion, suppressor, and accelerator in the plating solution. We also present a kinetic Monte Carlo model that can incorporate the chemical and transport properties of the ions and additives during the electroplating. We demonstrate the role of aspect ratio and attachment rates on defect-free bottom-up filling. These multiscale tools can provide the inputs for a continuum phase field model to predict the microstructure during TSV filling (not reported here).
License type:
PublisherCopyrights
Funding Info:
A*STAR Defect Science Programme Grant No. 1622400013
Description:
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISBN:
978-1-9445-4306-8
978-1-5386-9308-7
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