Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model

Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model

2019 Electron Devices Technology and Manufacturing Conference (EDTM)

10.1109/EDTM.2019.8731250

https://ieeexplore.ieee.org/document/8731250

MingRui Lai, Ramanarayan Hariharaputran, Khoong Hong Khoo, Hongmei Jin, Shunnian Wu, Chaitanya Amol Joshi, Kodanda Ram Mangipudi, Siu Sin Quek, David T. Wu, Sridhar Narayanaswamy, Bharathi Madurai Srinivasan

Through-silicon vias, Additives, Ions, Substrates, Kinetic theory, Filling, Monte Carlo methods

06 June 2019

L. MingRui et al., "Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model," 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Singapore, 2019, pp. 342-344, doi: 10.1109/EDTM.2019.8731250.

We present a kinetic Monte Carlo (KMC) model for the electroplating of through silicon vias. The KMC model includes the chemical and transport properties of the copper ions, suppressors and accelerators in the electrolyte. We have used density functional theory calculations to get the relative values of the barriers for the additives. We present the results obtained from the KMc simulations for different aspect ratios and nucleation barriers.

PublisherCopyrights

A*STAR Defect Science Programme Grant No. 1622400013

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https://oar.a-star.edu.sg/communities-collections/articles/15322

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Institute of High Performance Computing