Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model

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Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model
Title:
Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model
Journal Title:
2019 Electron Devices Technology and Manufacturing Conference (EDTM)
Publication Date:
06 June 2019
Citation:
L. MingRui et al., "Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model," 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Singapore, 2019, pp. 342-344, doi: 10.1109/EDTM.2019.8731250.
Abstract:
We present a kinetic Monte Carlo (KMC) model for the electroplating of through silicon vias. The KMC model includes the chemical and transport properties of the copper ions, suppressors and accelerators in the electrolyte. We have used density functional theory calculations to get the relative values of the barriers for the additives. We present the results obtained from the KMc simulations for different aspect ratios and nucleation barriers.
License type:
PublisherCopyrights
Funding Info:
A*STAR Defect Science Programme Grant No. 1622400013
Description:
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISBN:
978-1-5386-6508-4
978-1-5386-6509-1
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