Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons

Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
Title:
Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
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ACS Applied Electronic Materials
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Publication Date:
04 October 2019
Citation:
ACS Appl. Electron. Mater. 2019, 1, 11, 2202-2207
Abstract:
Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low-temperature electron transport through etched 50–70 nm MoS2 nanoribbons showing current oscillations. Current through the device forms diamond-shaped domains as a function of source-drain and gate voltage. We associate these current oscillations and diamond-shaped current domains with Coulomb blockade due to single electron tunneling through a quantum dot formed in the MoS2 nanoribbon. From the size of the Coulomb diamond, we estimate the quantum dot size 10–35 nm. We discuss the possible origins of quantum dot in our nanoribbon device and prospects to control or engineer the quantum dot in such etched MoS2 nanoribbons which can be a promising platform for spin-valley qubits in two-dimensional transition metal dichalcogenides.
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Funding Info:
A*STAR (Singapore) QTE Grant No. A1685b0005.
Description:
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.9b00390
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