Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices

Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices
Title:
Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices
Other Titles:
Applied Physics Letters
Keywords:
Publication Date:
23 September 2019
Citation:
Appl. Phys. Lett. 115, 133501 (2019); https://doi.org/10.1063/1.5100075
Abstract:
In this letter, we report analog switching characteristics in an analog resistive random access memory device based on a TiW/Al2O3/Ta2O5/Ta stack. For this device, both oxides were grown by using an atomic layer deposition system and the oxygen vacancies were found to exist at the interface of these oxides by using angle-resolved X-ray Photoelectron Spectroscopy. The device exhibits analog switching behaviors. Multiple states were achieved by applying 128 consecutive identical pulses of <20 μs duration and stable for at least 104 s. These characteristics show that the TiW/Al2O3/Ta2O5/Ta device is a promising candidate for synaptic applications.
License type:
PublisherCopyrights
Funding Info:
This research was supported by the SERC Grant No. A1687b0033.
Description:
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 115, 133501 (2019) and may be found at https://doi.org/10.1063/1.5100075
ISSN:
0003-6951
1077-3118
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