Plasmonic nanoparticle lithography: Fast resist-free laser technique for large-scale sub-50 nm hole array fabrication

Plasmonic nanoparticle lithography: Fast resist-free laser technique for large-scale sub-50 nm hole array fabrication
Title:
Plasmonic nanoparticle lithography: Fast resist-free laser technique for large-scale sub-50 nm hole array fabrication
Other Titles:
Applied Physics Letters
Keywords:
Publication Date:
29 May 2018
Citation:
Appl. Phys. Lett. 112, 223101 (2018); https://doi.org/10.1063/1.5025096
Abstract:
Cheap large-scale fabrication of ordered nanostructures is important for multiple applications in photonics and biomedicine including optical filters, solar cells, plasmonic biosensors, and DNA sequencing. Existing methods are either expensive or have strict limitations on the feature size and fabrication complexity. Here, we present a laser-based technique, plasmonic nanoparticle lithography, which is capable of rapid fabrication of large-scale arrays of sub-50 nm holes on various substrates. It is based on near-field enhancement and melting induced under ordered arrays of plasmonic nanoparticles, which are brought into contact or in close proximity to a desired material and acting as optical near-field lenses. The nanoparticles are arranged in ordered patterns on a flexible substrate and can be attached and removed from the patterned sample surface. At optimized laser fluence, the nanohole patterning process does not create any observable changes to the nanoparticles and they have been applied multiple times as reusable near-field masks. This resist-free nanolithography technique provides a simple and cheap solution for large-scale nanofabrication.
License type:
PublisherCopyrights
Funding Info:
This work was supported by Data Storage Institute (DSI) core funds.
Description:
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 112, 223101 (2018) and may be found at https://doi.org/10.1063/1.5025096
ISSN:
0003-6951
1077-3118
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