Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

Scientific Reports

10.1038/s41598-019-45392-9

https://doi.org/10.1038/s41598-019-45392-9

Chit Siong Lau, Jing Yee Chee, Dickson Thian, Hiroyo Kawai, Jie Deng, Swee Liang Wong, Zi En Ooi, Yee-Fun Lim, Kuan Eng Johnson Goh

2D TMDC, MoS2, WSe2

19 June 2019

Lau, C.S., Chee, J.Y., Thian, D. et al. Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric. Sci Rep 9, 8769 (2019).

We report transport measurements of dual gated MoS2 and WSe2 devices using atomic layer deposition grown Al2O3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.

http://creativecommons.org/licenses/by/4.0/

A*STAR (Singapore) QTE Grant No. A1685b0005.

https://oar.a-star.edu.sg/communities-collections/articles/15084

2045-2322

Institute of Materials Research and Engineering