Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric
Title:
Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric
Other Titles:
Scientific Reports
Publication Date:
19 June 2019
Citation:
Lau, C.S., Chee, J.Y., Thian, D. et al. Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric. Sci Rep 9, 8769 (2019).
Abstract:
We report transport measurements of dual gated MoS2 and WSe2 devices using atomic layer deposition grown Al2O3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.
License type:
http://creativecommons.org/licenses/by/4.0/
Funding Info:
A*STAR (Singapore) QTE Grant No. A1685b0005.
Description:
ISSN:
2045-2322
Files uploaded:

File Size Format Action
s41598-019-45392-9.pdf 1.91 MB PDF Open