Protected hole valley states in single-layer MoS2

Protected hole valley states in single-layer MoS2
Title:
Protected hole valley states in single-layer MoS2
Other Titles:
Physical Review B
Publication Date:
22 January 2019
Citation:
Phys. Rev. B 99, 045134
Abstract:
We present an angle-resolved photoemission spectroscopy study of single-layer MoS2 where interaction with a supporting highly ordered pyrolytic graphite substrate was controlled by temperature change, consistent with related modifications in the layer-substrate distance. The impact of interface potential landscape changes on the electronic properties and charge dynamics on the MoS2 layer was evaluated by valence-band dispersion and photoemission line-shape analysis. Our results indicate that the hole states at the K-valley point are essentially unaffected by interface potential, reflecting the strong-in plane localization of the electronic wave function.
License type:
PublisherCopyrights
Funding Info:
A*STAR 2D PHAROS Grant No. 1527000016, A*STAR QTE Grant No. A1685b0005
Description:
ISSN:
2469-9950
2469-9969
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