Single layer MoS2 nanoribbon field effect transistor

Single layer MoS2 nanoribbon field effect transistor
Title:
Single layer MoS2 nanoribbon field effect transistor
Other Titles:
Applied Physics Letters
Keywords:
Publication Date:
08 January 2019
Citation:
Appl. Phys. Lett. 114, 013508 (2019); https://doi.org/10.1063/1.5079860
Abstract:
We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50 nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over the etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5 V/dec using a global backgate. Moreover, we measure a high current density of 38 μA/μm, resulting in a high on/off ratio of the order of 105. We observe mobility reaching as high as 50 cm2/V s with increasing source-drain bias.
License type:
PublisherCopyrights
Funding Info:
A*STAR (Singapore) QTE Grant No. A1685b0005
Description:
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 114, 013508 (2019), and may be found at https://doi.org/10.1063/1.5079860
ISSN:
0003-6951
1077-3118
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