Analog switching characteristics in TiW/ Al2O3/Ta2O5/Ta RRAM devices

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Analog switching characteristics in TiW/ Al2O3/Ta2O5/Ta RRAM devices
Title:
Analog switching characteristics in TiW/ Al2O3/Ta2O5/Ta RRAM devices
Journal Title:
Applied Physics Letters
Keywords:
Publication Date:
23 September 2019
Citation:
Appl. Phys. Lett. 115, 133501 (2019); https://doi.org/10.1063/1.5100075
Abstract:
In this letter, we report analog switching characteristics in an analog resistive random access memory device based on a TiW/Al2O3/Ta2O5/Ta stack. For this device, both oxides were grown by using an atomic layer deposition system and the oxygen vacancies were found to exist at the interface of these oxides by using angle-resolved X-ray Photoelectron Spectroscopy. The device exhibits analog switching behaviors. Multiple states were achieved by applying 128 consecutive identical pulses of
License type:
PublisherCopyrights
Funding Info:
Description:
ISSN:
0003-6951
1077-3118
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