A photonic bandgap structure was created on the 100 nm thick GaAs barrier layer with Au nanodisks deposited inside the holes. To mitigate the nonradiative surface recombination of GaAs, the Au nanodisks were formed on top of a 15 nm SiO2 deposited in the holes. A maximum 7.6-fold increase in photoluminescence intensity was obtained at the etch depth of 80 nm. In this configuration, the Au nanodisk is separated from the quantum well by 20 nm of GaAs and 15 nm of SiO2. The experimental result was verified by the simulation based on this structure. There was a good agreement between experiments with simulation results.