Simultaneous coupling of surface plasmon resonance and photonic bandgap to InGaAs quantum well emission

Simultaneous coupling of surface plasmon resonance and photonic bandgap to InGaAs quantum well emission
Title:
Simultaneous coupling of surface plasmon resonance and photonic bandgap to InGaAs quantum well emission
Other Titles:
Journal of Applied Physics
Keywords:
Publication Date:
07 January 2016
Citation:
Journal of Applied Physics 119, 013104 (2016); https://doi.org/10.1063/1.4939502
Abstract:
A photonic bandgap structure was created on the 100 nm thick GaAs barrier layer with Au nanodisks deposited inside the holes. To mitigate the nonradiative surface recombination of GaAs, the Au nanodisks were formed on top of a 15 nm SiO2 deposited in the holes. A maximum 7.6-fold increase in photoluminescence intensity was obtained at the etch depth of 80 nm. In this configuration, the Au nanodisk is separated from the quantum well by 20 nm of GaAs and 15 nm of SiO2. The experimental result was verified by the simulation based on this structure. There was a good agreement between experiments with simulation results.
License type:
PublisherCopyrights
Funding Info:
The authors acknowledge funding provided by Singapore Ministry of Education (Project No. MOE2009-T2-1-086).
Description:
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 119, 013104 (2016); and may be found at https://doi.org/10.1063/1.4939502
ISSN:
0021-8979
1089-7550
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