Dual MEMS Resonator Structure for Temperature Sensor Applications

Page view(s)
Checked on Oct 23, 2022
Dual MEMS Resonator Structure for Temperature Sensor Applications
Dual MEMS Resonator Structure for Temperature Sensor Applications
Other Titles:
IEEE Transactions on Electron Devices
Publication Date:
01 August 2017
H. Campanella, M. Narducci, S. Merugu and N. Singh, "Dual MEMS Resonator Structure for Temperature Sensor Applications," in IEEE Transactions on Electron Devices, vol. 64, no. 8, pp. 3368-3376, Aug. 2017. doi: 10.1109/TED.2017.2708129
This paper reports an acoustic microelectromechanical system (MEMS) resonator structure that features dual-resonant response at 180 and 500 MHz. The MEMS structure uses aluminum nitride as acoustic layer and electrodes with dual design that provide dual-resonance behavior. Each resonant mode operates at the first symmetrical Lamb-wave mode (S0). Due to the large frequency separation between modes, device exhibits differentiated temperature coefficient of frequency) for each mode, which makes this structure suitable for thermometric beat frequency sensing. Reported devices are thus capable to multiply the 20-ppm/°C thermal sensitivity of the individual sensors by one order of magnitude, up to −334 ppm/°C for the thermometric beat frequency sensor.
License type:
Funding Info:
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Files uploaded:
File Size Format Action
There are no attached files.