Demonstration of color display metasurfaces via immersion lithography on a 12-inch silicon wafer

Demonstration of color display metasurfaces via immersion lithography on a 12-inch silicon wafer
Title:
Demonstration of color display metasurfaces via immersion lithography on a 12-inch silicon wafer
Other Titles:
Optics Express
Keywords:
Publication Date:
23 July 2018
Citation:
Ting Hu, Chih-Kuo Tseng, Yuan Hsing Fu, Zhengji Xu, Yuan Dong, Shijie Wang, Keng Heng Lai, Vladimir Bliznetsov, Shiyang Zhu, Qunying Lin, and Yuandong Gu, "Demonstration of color display metasurfaces via immersion lithography on a 12-inch silicon wafer," Opt. Express 26, 19548-19554 (2018)
Abstract:
The demonstration of a color display metasurface on a 12-inch silicon wafer with critical dimension (CD) below 100 nm by complementary metal-oxide semiconductor (CMOS) compatible technology is reported for the first time. The 193 nm ArF deep UV immersion lithography is leveraged instead of electron beam lithography (EBL) to pattern the metasurface, which greatly improves the efficiency while keeping a high resolution. The demonstrated metasurface successfully generates the resonant modes and reflects the lights at resonance wavelengths, giving its display in red, green, and blue (RGB) colors. The wafer level uniformities of CD and reflection characteristic of the metasurface are measured and analyzed. The experimental data show that they are well controlled in the fabrication process. The work provides a promising route towards mass production of dielectric metasurfaces.
License type:
PublisherCopyrights
Funding Info:
Description:
2018 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
ISSN:
1094-4087
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