High Vacuum and High Robustness Al-Ge Bonding for Wafer Level Chip Scale Packaging of MEMS Sensors

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High Vacuum and High Robustness Al-Ge Bonding for Wafer Level Chip Scale Packaging of MEMS Sensors
Title:
High Vacuum and High Robustness Al-Ge Bonding for Wafer Level Chip Scale Packaging of MEMS Sensors
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2017 IEEE 67th Electronic Components and Technology Conference (ECTC)
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30 May 2017
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This paper presents the development of Al-Ge eutectic bonding for wafer level chip scale packaging of MEMS sensors. Al is sputtered on the MEMS wafer while an AUTi/Ge stack is sputtered on the cap wafer. The bonding temperature and bonding time are 43UC and 30min, respectively. A CMOS compatible Ti/Ni stack was deposited as getter on the cap wafer to maintain the vacuum level inside the cavity. A silicon pirani gauge was used as hermeticity indicator to evaluate the vacuum level of the bonding. The operational dynamic range of the pirani gauge is 100mTorr-76Torr. The experimental results over three wafers show that the achieved vacuum level of the bonding is less than 200mTorr with yield more than 90%; 1000 rapid thermal cycles from -50°C to 150°C with 1 hour for each cycle were conducted, and the related vacuum level were recorded at 150th, 400th, 650th, 800th, 1000th cycle. The normalized vacuum degradation percentage are about 1.6%, 2.05%, 2.25%, 2.54%, 2.78%, 2.82%, respectively. The results also show the vacuum level trends to be stable from the 650th cycle.
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(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
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