High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions

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High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions
Title:
High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions
Journal Title:
Journal of applied physics
Keywords:
Publication Date:
17 December 2015
Citation:
J. Appl. Phys. 118, 233906 (2015)
Abstract:
Heulser alloys Fe2Cr1 xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability D can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.
License type:
PublisherCopyrights
Funding Info:
Description:
ISSN:
0021-8979
1089-7550
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