Fabrication and Assembly of Cu-RDL-Based 2.5-D Low-Cost Through Silicon Interposer (LC–TSI)

Fabrication and Assembly of Cu-RDL-Based 2.5-D Low-Cost Through Silicon Interposer (LC–TSI)

IEEE Design & Test

10.1109/MDAT.2015.2424429

http://dx.doi.org/10.1109/MDAT.2015.2424429

Guruprasad Katti, David Soon Wee Ho, Hong Yu Li, Rahul Dutta, Roshan Weerasekera, Ka Fai Chang, Jong-Kai Lin, Vempati Srinivasa Rao, Surya Bhattacharya

01 August 2015

G. Katti et al., "Fabrication and Assembly of Cu-RDL-Based 2.5-D Low-Cost Through Silicon Interposer (LC–TSI)," in IEEE Design & Test, vol. 32, no. 4, pp. 23-31, Aug. 2015. doi: 10.1109/MDAT.2015.2424429

Two-and-a-half-dimensional integration enables high-density interdie connections with low cost. This paper presents a through silicon interposer (TSI) fabrication process and detailed characterization and measurement results of redistribution layers and through silicon vias for low-cost 2.5-D integration.

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Institute of Microelectronics