Fabrication and Assembly of Cu-RDL-Based 2.5-D Low-Cost Through Silicon Interposer (LC–TSI)

Fabrication and Assembly of Cu-RDL-Based 2.5-D Low-Cost Through Silicon Interposer (LC–TSI)
Title:
Fabrication and Assembly of Cu-RDL-Based 2.5-D Low-Cost Through Silicon Interposer (LC–TSI)
Other Titles:
IEEE Design & Test
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Publication Date:
01 August 2015
Citation:
G. Katti et al., "Fabrication and Assembly of Cu-RDL-Based 2.5-D Low-Cost Through Silicon Interposer (LC–TSI)," in IEEE Design & Test, vol. 32, no. 4, pp. 23-31, Aug. 2015. doi: 10.1109/MDAT.2015.2424429
Abstract:
Two-and-a-half-dimensional integration enables high-density interdie connections with low cost. This paper presents a through silicon interposer (TSI) fabrication process and detailed characterization and measurement results of redistribution layers and through silicon vias for low-cost 2.5-D integration.
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PublisherCopyrights
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Description:
(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
ISSN:
2168-2356
2168-2364
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