Components for silicon plasmonic nanocircuits based on horizontal Cu-SiO_2-Si-SiO_2-Cu nanoplasmonic waveguides

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Components for silicon plasmonic nanocircuits based on horizontal Cu-SiO_2-Si-SiO_2-Cu nanoplasmonic waveguides
Title:
Components for silicon plasmonic nanocircuits based on horizontal Cu-SiO_2-Si-SiO_2-Cu nanoplasmonic waveguides
Journal Title:
Optics Express
Keywords:
Publication Date:
27 February 2012
Citation:
Zhu, S., Lo, G. Q. & Kwong, D. L. Components for silicon plasmonic nanocircuits based on horizontal Cu-SiO2-Si-SiO2-Cu nanoplasmonic waveguides. Optics Express 20, 5867–5881 (2012).
Abstract:
We report systematic results on the development of horizontal Cu-SiO2-Si-SiO2-Cu nanoplasmonic waveguide components operating at 1550-nm telecom wavelengths, including straight waveguides, sharp 90° bends, power splitters, and Mach-Zehnder interferometers (MZIs). Owing to the relatively low loss for propagating (~0.3 dB/µm) and for 90° sharply bending (~0.73 dB/turn), various ultracompact power splitters and MZIs are experimentally realized on a silicon-on-insulator (SOI) platform using standard CMOS technology. The demonstrated splitters exhibit a relatively low excess loss and the MZIs exhibit good performance such as high extinction ratio of ~18 dB and low normalized insertion loss of ~1.7 dB. The experimental results of these devices agree well with those predicted from numerical simulations with suitable Cu permittivity data.
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PublisherCopyrights
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Description:
Full paper can be downloaded from the Publisher's URL provided.
ISSN:
1094-4087
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