The Role of Ti Capping Layer in HfOX Based RRAM Devices

The Role of Ti Capping Layer in HfOX Based RRAM Devices
Title:
The Role of Ti Capping Layer in HfOX Based RRAM Devices
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IEEE Electron Device Letters
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Publication Date:
01 September 2014
Citation:
Zheng Fang; Xin Peng Wang; Joon Sohn; Bao Bin Weng; Zhi Ping Zhang; Zhi Xian Chen; Yan Zhe Tang; Guo-Qiang Lo; Provine, J.; Wong, S.S.; Wong, H.-S.P.; Dim-Lee Kwong, "The Role of Ti Capping Layer in HfOx-Based RRAM Devices," Electron Device Letters, IEEE , vol.35, no.9, pp.912,914, Sept. 2014 doi: 10.1109/LED.2014.2334311
Abstract:
In this letter, we examine the role of the Ti capping layer in HfOx-based resistive random access memory (RRAM) devices on the memory performance. It is found that with a thicker Ti capping layer, the fresh device initial leakage current increases and as a result, the forming voltage decreases. In addition, with a thin Ti layer of <3 nm (on top of 8-nm HfOx ), there is no resistive switching, while by inserting a thicker Ti layer of 10 nm, the memory window enlarges to about two orders. Very good uni formity has also been observed in thick Ti capping devices, demonstrating the effectiveness in RRAM device engineering. It is believed that the Ti layer serves as an oxygen reservoir, by extracting oxygen during device formation and electrical forming process and facilitates resistive switching thereafter.
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PublisherCopyrights
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(c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
ISSN:
0741-3106
1558-0563
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