Chen, Z., Fang, Z., Wang, Y. et al. Journal of Elec Materi (2014) 43: 4193. doi:10.1007/s11664-014-3309-9
Abstract:
We present a study of Ni silicide as the bottom electrode in HfO2-based resistive random-access memory cells. Various silicidation conditions were used for each device, yielding different Ni concentrations within the electrode. A higher concentration of Ni in the bottom electrode was found to cause a parasitic SET operation during certain RESET operation cycles, being attributed to field-assisted Ni cation migration creating a Ni filament. As such, the RESET is affected unless an appropriate RESET voltage is used. Bottom
electrodes with lower concentrations of Ni were able to switch at ultralow currents (RESET current