Aluminum nitride electro-optic phase shifter for backend integration on silicon

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Aluminum nitride electro-optic phase shifter for backend integration on silicon
Title:
Aluminum nitride electro-optic phase shifter for backend integration on silicon
Other Titles:
Optics Express
Keywords:
Publication Date:
13 June 2016
Citation:
Shiyang Zhu and Guo-Qiang Lo, "Aluminum nitride electro-optic phase shifter for backend integration on silicon," Opt. Express 24, 12501-12506 (2016)
Abstract:
An AlN electro-optic phase shifter with a parallel plate capacitor structure is fabricated on Si using the back-end complementary metaloxide-semiconductor technology, which is feasible for multilayer photonics integration. The modulation efficiency (Vπ⋅Lπ product) measured from the fabricated waveguide-ring resonators and Mach-Zehnder Interferometer (MZI) modulators near the 1550-nm wavelength is ∼240 V⋅cm for the transverse electric (TE) mode and ∼320 V⋅cm for the transverse magnetic (TM) mode, from which the Pockels coefficient of the deposited AlN is deduced to be ∼1.0 pm/V for both TE and TM modes. The methods for further modulation efficiency improvement are addressed.
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PublisherCopyrights
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Full paper can be downloaded from the Publisher's URL provided.
ISSN:
1094-4087
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