Methods for precisely controlling the residual stress and temperature coefficient of the frequency of a MEMS resonator based on an AlN cavity silicon-on-insulator platform

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Methods for precisely controlling the residual stress and temperature coefficient of the frequency of a MEMS resonator based on an AlN cavity silicon-on-insulator platform
Title:
Methods for precisely controlling the residual stress and temperature coefficient of the frequency of a MEMS resonator based on an AlN cavity silicon-on-insulator platform
Other Titles:
Journal of Micromechanics and Microengineering
Keywords:
Publication Date:
20 May 2016
Citation:
Nan Wang et al 2016 J. Micromech. Microeng. 26 074003
Abstract:
In this paper, we report an experimentally verified numerical model developed for precisely predicting and controlling the initial bending of a multi-layer-stack composite cantilever structure which is caused by the residual stress of the individual constituting layers, as well as the cantilever’s thermal coefficient of frequency (TCF). The developed model is exemplified using a flexural-mode cantilever resonator according to the process flow of the aluminium nitride (AlN) cavity silicon-on-insulator (SOI) platform. The same AlN cavity SOI platform is also utilized to fabricate the exemplified cantilever, which is then used to experimentally verify the accuracy and consistency of the numerical model. The experimental results show a difference of less than 3.5% is observed in terms of the deflection at the tip of the cantilever as compared with the numerical model, demonstrating the accuracy of the developed numerical model and the feasibility to optimize the cantilever’s initial deflection and TCF simultaneously, achieving minimum values for both parameters at the same time.
License type:
PublisherCopyrights
Funding Info:
Description:
ISSN:
0960-1317
1361-6439
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