Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation

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Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation
Title:
Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation
Journal Title:
Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
Keywords:
Publication Date:
27 October 2014
Citation:
M. H. Li, Y. Jiang, V. Y. Q. Zhuo, E. G. Yeo, L. T. Law and K. G. Lim, "Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation," Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual, Jeju Island, 2014, pp. 1-3.
Abstract:
Ta/TaOx-based Resistive Random Access Memory (RRAM) is studied using current-sweeping (I-sweep) DC switching operation. The self-compliance SET program is achieved to prevent the device from current overshoot. The SET current and voltage are comparable with those measured by the conventional voltage-sweeping (V-sweep) operation, but better uniformity is realized. It is found that the high high-resistance state (HRS) resistance results in lower I-sweep SET current but higher SET voltage. As opposed to the V-sweep switching process, the I-sweep SET is a gradual process. Therefore, the low-resistance-state (LRS) resistance can be controlled easily and reliably. It will be beneficial to a new multilevel cell design for high density memory applications.
License type:
PublisherCopyrights
Funding Info:
Description:
(c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
ISBN:
978-1-4799-4203-9
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