M. H. Li, Y. Jiang, V. Y. Q. Zhuo, E. G. Yeo, L. T. Law and K. G. Lim, "Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation," Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual, Jeju Island, 2014, pp. 1-3.
Abstract:
Ta/TaOx-based Resistive Random Access Memory (RRAM) is studied using current-sweeping (I-sweep) DC
switching operation. The self-compliance SET program is achieved to prevent the device from current overshoot. The SET current and voltage are comparable with those measured by the conventional voltage-sweeping (V-sweep) operation, but better uniformity is realized. It is found that the high high-resistance state
(HRS) resistance results in lower I-sweep SET current but higher SET voltage. As opposed to the V-sweep switching process, the I-sweep SET is a gradual process. Therefore, the low-resistance-state (LRS) resistance can be controlled easily and reliably. It will be beneficial to a new multilevel cell design for
high density memory applications.
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