Novel Strained SiGe/TaOx/Ta RRAM Device Fabricated by Fully CMOS Compatible Process

Novel Strained SiGe/TaOx/Ta RRAM Device Fabricated by Fully CMOS Compatible Process

The 14th Non-Volatile Memory Technology Symposium (NVMTS 2014)

10.1109/NVMTS.2014.7060849

http://dx.doi.org/10.1109/NVMTS.2014.7060849

Y. Jiang, C. C. Tan, E. G. Yeo, M. H. Li, W. He, V. Y.-Q. Zhuo, Z. Fang, B. B. Weng

27 October 2014

Y. Jiang et al., "Novel strained SiGe/TaOx/Ta RRAM device fabricated by fully CMOS compatible process," Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual, Jeju Island, 2014, pp. 1-4.

A novel strained SiGe/TaOx/Ta RRAM device is successfully demonstrated via a fully CMOS compatible process. The bottom electrode (BE) is made of strained single crystalline SiGe layer where both n type and p type SiGe layer as the BE. Typical bipolar switching behavior is obtained for such RRAM devices. Cycle to cycle uniformity are investigated in this work, and it is found that n type SiGe as BE shows better uniformity due to the better dopant distribution for Arsenic than Boron in SiGe layer.

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https://oar.a-star.edu.sg/communities-collections/articles/12694

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Data Storage Institute