Novel Strained SiGe/TaOx/Ta RRAM Device Fabricated by Fully CMOS Compatible Process

Page view(s)
28
Checked on Jan 07, 2025
Novel Strained SiGe/TaOx/Ta RRAM Device Fabricated by Fully CMOS Compatible Process
Title:
Novel Strained SiGe/TaOx/Ta RRAM Device Fabricated by Fully CMOS Compatible Process
Journal Title:
The 14th Non-Volatile Memory Technology Symposium (NVMTS 2014)
Keywords:
Publication Date:
27 October 2014
Citation:
Y. Jiang et al., "Novel strained SiGe/TaOx/Ta RRAM device fabricated by fully CMOS compatible process," Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual, Jeju Island, 2014, pp. 1-4.
Abstract:
A novel strained SiGe/TaOx/Ta RRAM device is successfully demonstrated via a fully CMOS compatible process. The bottom electrode (BE) is made of strained single crystalline SiGe layer where both n type and p type SiGe layer as the BE. Typical bipolar switching behavior is obtained for such RRAM devices. Cycle to cycle uniformity are investigated in this work, and it is found that n type SiGe as BE shows better uniformity due to the better dopant distribution for Arsenic than Boron in SiGe layer.
License type:
PublisherCopyrights
Funding Info:
Description:
(c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
ISBN:
978-1-4799-4203-9
Files uploaded:

File Size Format Action
2672.pdf 779.04 KB PDF Open