Spin transfer torque (STT) MRAM and beyond

Page view(s)
10
Checked on Oct 23, 2022
Spin transfer torque (STT) MRAM and beyond
Title:
Spin transfer torque (STT) MRAM and beyond
Other Titles:
Magnetics Symposium 2014 - Celebrating 50th Anniversary of IEEE Magnetics Society (MSSC50)
Keywords:
Publication Date:
22 September 2014
Citation:
H. Guchang, H. Jiancheng, S. C. Hin, M. Tran and L. S. Ter, "Spin transfer torque (STT) MRAM and beyond," Magnetics Symposium 2014 - Celebrating 50th Anniversary of IEEE Magnetics Society (MSSC50), Singapore, 2014, pp. 1-2.
Abstract:
Spin transfer torque (STT) MRAM is a promising scalable nonvolatile memory that may have fast speed, long endurance and low power consumption. In order to realize all these advantages, we first review the key requirements for storage materials with perpendicular magnetic anisotropy (PMA). STT-switching current is too high for lowpower application due to low-energy efficiency. Among different types of alternative switching methods, electric field (EF) assisted switching is the most promising candidate. We proposed Oersted field guided EF switching and EF pulse width controlled switching for ellipse cells. Our experimental results show that even with an external field of ±5 Oe, the magnetization switching can be realized through applying an electric field. Our simulation results show that for ellipse cells, the bistate switching can be controlled by EF pulse width without any external field.
License type:
PublisherCopyrights
Funding Info:
Description:
(c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
ISBN:

Files uploaded:

File Size Format Action
2757.pdf 375.60 KB PDF Open