Designs of Silicon MIS Phase Modulator With a Deposited AlN Film as the Gate Dielectric

Page view(s)
11
Checked on May 22, 2024
Designs of Silicon MIS Phase Modulator With a Deposited AlN Film as the Gate Dielectric
Title:
Designs of Silicon MIS Phase Modulator With a Deposited AlN Film as the Gate Dielectric
Journal Title:
IEEE Photonics Technology Letters
Publication URL:
Keywords:
Publication Date:
01 June 2015
Citation:
Shiyang Zhu; Guo-Qiang Lo, "Designs of Silicon MIS Phase Modulator With a Deposited AlN Film as the Gate Dielectric," Photonics Technology Letters, IEEE , vol.27, no.11, pp.1236,1239, June1, 1 2015 doi: 10.1109/LPT.2015.2415484
Abstract:
We propose and analyze a silicon metal–insulator– semiconductor phase modulator based on a poly-Si/AlN/Si horizontal slot waveguide. The AlN gate dielectric exhibits an inherent Pockels effect, which can provide additional phase modulation besides that provided by the free-carrier plasma dispersion effect of Si. The proposed modulator with an optimized geometry offers a high modulation efficiency of 0.95 V · cm for the 1.55-μm transverse magnetic light even the electro optical coefficient of AlN (r33) is only 1 pm/V, which is ∼40% better than the SiO2 counterpart with the same equivalent oxide thickness. The modulation efficiency increases quickly with r33 increasing, reaching 0.2 V · cm when r33 is 10 pm/V.
License type:
PublisherCopyrights
Funding Info:
Description:
(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
ISSN:
1041-1135
Files uploaded:

File Size Format Action
pub14-253-nanop-040-pp.pdf 467.33 KB PDF Open