Improved Switching Uniformity and Low Voltage Operation in TaOx-based RRAM Using Ge Reactive Layer

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Improved Switching Uniformity and Low Voltage Operation in TaOx-based RRAM Using Ge Reactive Layer
Title:
Improved Switching Uniformity and Low Voltage Operation in TaOx-based RRAM Using Ge Reactive Layer
Journal Title:
Electron Device Letters, IEEE
Keywords:
Publication Date:
11 July 2013
Citation:
Zhuo, V.Y.-Q.; Yu Jiang; Rong Zhao; Lu Ping Shi; Yi Yang; Tow Chong Chong; Robertson, J., "Improved Switching Uniformity and Low-Voltage Operation in {\rm TaO}_{x} -Based RRAM Using Ge Reactive Layer," in Electron Device Letters, IEEE , vol.34, no.9, pp.1130-1132, Sept. 2013 doi: 10.1109/LED.2013.2271545
Abstract:
Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaOx devices.
License type:
PublisherCopyrights
Funding Info:
Description:
(c) 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
ISSN:
0741-3106
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