Development of silicon electrode enhanced by carbon nanotube and gold nanoparticle composites on silicon neural probe fabricated with complementary metal-oxidesemiconductor process
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Development of silicon electrode enhanced by carbon nanotube and gold nanoparticle composites on silicon neural probe fabricated with complementary metal-oxidesemiconductor process
Development of silicon electrode enhanced by carbon nanotube and gold nanoparticle composites on silicon neural probe fabricated with complementary metal-oxidesemiconductor process
We present the fabrication of highly P-doped single crystal silicon electrodes on a silicon probe through complementary metal-oxide-semiconductor (CMOS)-compatible processes. The electrode with diameter of 50 lm and a separation of 200 lm is designed for recording/stimulating purposes. Electrochemical impedance spectroscopy indicates that the interfacial impedance of silicon electrodes at 1 KHz is 2.560.4 MX, which is equivalent to the result reported from the gold (Au) electrode. To further enhance the charge storage capacity, composites of multi-wall carbon nanotubes (MWCNTs) and Au nanoparticles are electroplated onto the highly P-doped silicon electrode after surface roughness treatments. With optimized electroplating processes, MWCNTs and Au nanoparticles are selectively coated onto the electrode site with only a minimum enlargement in physical diameter of electrode (
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Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 104, 193105 (2014) and may be found at http://dx.doi.org/10.1063/1.4875961.