Demonstration of heterogeneous III–V/Si integration with a compact optical vertical interconnect access

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Demonstration of heterogeneous III–V/Si integration with a compact optical vertical interconnect access
Title:
Demonstration of heterogeneous III–V/Si integration with a compact optical vertical interconnect access
Journal Title:
Optics Letters
Keywords:
Publication Date:
09 December 2013
Citation:
Doris Keh Ting Ng, Qian Wang, Jing Pu, Kim Peng Lim, Yongqiang Wei, Yadong Wang, Yicheng Lai, and Seng Tiong Ho, "Demonstration of heterogeneous III–V/Si integration with a compact optical vertical interconnect access," Opt. Lett. 38, 5353-5356 (2013)
Abstract:
Heterogeneous Si/III-V integration with a compact optical vertical interconnect access is fabricated and the light coupling efficiency between the Si/III-V waveguide and silicon nanophotonic waveguide is characterized. The III-V semiconductor material is directly bonded to the silicon-on-insulator substrate and etched to form the Si/III-V waveguide for a higher light confinement in the active region. The compact optical vertical interconnect access is formed through etching the III-V and SOI layer, which are tapered in the same direction. The measured Si/III-V waveguide has a light coupling efficiency of ~90% to the silicon photonic layer with the tapering structure. This heterogeneous and light coupling structure can provide an efficient platform for photonic system on chip including passive and active devices.
License type:
PublisherCopyrights
Funding Info:
Description:
© 2013 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
ISSN:
0146-9592
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