The authors report the first realization of sub-200 nm wide AlN-GaN-AlN (AGA) ridge waveguide
with height-to-width ratio of 6:1, fabricated via inductively coupled plasma (ICP) etching with
Cl2/Ar gas chemistry. Reactive ion etching (RIE) power and ICP power were varied in the ranges
of 100–450W and 200–600 W, respectively. An optimized RIE power and ICP power at 100 and
400 W, respectively, reduced the density of nanorods formed in the etched trenches. Further optimization
of the gas flow rate of Cl2/Ar to 40/10 sccm improved the slope of the etched waveguide. In
addition, the authors also developed a simple and novel dice-and-cleave technique to achieve
cleaved end facet of AGA waveguide.
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Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Vac. Sci. Technol. B 32, 041207 (2014) and may be found at http://dx.doi.org/10.1116/1.4890487.