Fabrication of sub-200nm AlN-GaN-AlN waveguide with cleaved end facet

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Fabrication of sub-200nm AlN-GaN-AlN waveguide with cleaved end facet
Title:
Fabrication of sub-200nm AlN-GaN-AlN waveguide with cleaved end facet
Journal Title:
Journal of Vacuum Science & Technology B
Keywords:
Publication Date:
17 July 2014
Citation:
J. Vac. Sci. Technol. B 32, 041207 (2014)
Abstract:
The authors report the first realization of sub-200 nm wide AlN-GaN-AlN (AGA) ridge waveguide with height-to-width ratio of 6:1, fabricated via inductively coupled plasma (ICP) etching with Cl2/Ar gas chemistry. Reactive ion etching (RIE) power and ICP power were varied in the ranges of 100–450W and 200–600 W, respectively. An optimized RIE power and ICP power at 100 and 400 W, respectively, reduced the density of nanorods formed in the etched trenches. Further optimization of the gas flow rate of Cl2/Ar to 40/10 sccm improved the slope of the etched waveguide. In addition, the authors also developed a simple and novel dice-and-cleave technique to achieve cleaved end facet of AGA waveguide.
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PublisherCopyrights
Funding Info:
Description:
Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Vac. Sci. Technol. B 32, 041207 (2014) and may be found at http://dx.doi.org/10.1116/1.4890487.
ISSN:
1071-1023
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